Performance improvements of ultraviolet/infrared dual-band detectors

Infrared Physics and Technology

Volumn 50, Issue 2-3, 2007, Pages 142-148

  Perera, A G U ^a   Ariyawansa, G ^a   Rinzan, M B M ^a   Stevens, M ^a   Alevli, M ^a   Dietz, N ^a   Matsik, S G ^b   Asghar, A ^c   Ferguson, I T ^c   Luo, H ^d   Bezinger, A ^d   Liu, H C ^d  

^a GEORGIA STATE UNIVERSITY   (United States)

^b NDP Optronics LLC   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Dual band detector; GaN AlGaN; IR detectors; UV detectors

Indexed keywords

GALLIUM NITRIDE; INFRARED ABSORPTION; PHOTOEMISSION; SEMICONDUCTING GALLIUM ARSENIDE; ULTRAVIOLET DETECTORS;

DUAL BAND DETECTORS; FREE CARRIER ABSORPTION; IMPURITY RESPONSE; PEAK RESPONSIVITY;

INFRARED DETECTORS;

EID: 34047249387     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2006.10.013     Document Type: Article

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