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Volumn 86, Issue 14, 2005, Pages 1-3

Near- and far-infrared p-GaAs dual-band detector

(9) Ariyawansa, G a Rinzan, M B M a Esaev, D G a Matsik, S G a Hastings, G a Perera, A G U a Liu, H C b Zvonkov, B N c Gavrilenko, V I c

a GEORGIA STATE UNIVERSITY (United States)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

c INSTITUTE FOR PHYSICS OF MICROSTRUCTURES (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BOLOMETERS; CARBON; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); FOURIER TRANSFORMS; INFRARED RADIATION; PHOTOEMISSION; PHOTONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

DUAL-BAND DETECTORS; HOMOJUNCTIONS; INTERBAND TRANSITION; THRESHOLD WAVELENGTH;

INFRARED DETECTORS;

EID: 17444380410 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1899242 Document Type: Article

Times cited : (23)

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