Bias effects in high performance GaAs homojunction far-infrared detectors

Applied Physics Letters

Volumn 71, Issue 18, 1997, Pages 2677-2679

  Shen, W Z ^a   Perera, A G U ^a   Liu, H C ^b   Buchanan, M ^b   Schaff, W J ^c  

^a GEORGIA STATE UNIVERSITY   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROOPTICAL EFFECTS; MATHEMATICAL MODELS; PERFORMANCE; QUANTUM EFFICIENCY;

BIAS EFFECTS; CUTOFF WAVELENGTH; FAR INFRARED DETECTORS; HOMOJUNCTION INTERFACIAL WORKFUNCTION INTERNAL PHOTOEMISSION;

INFRARED DETECTORS;

EID: 0031551674     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120176     Document Type: Article

References (12)

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