Design and optimization of GaAs/AlGaAs heterojunctfon infrared detectors

Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4588-4597

  Esaev, D Q ^a,b   Rinzan, M B M ^a   Matsik, S G ^a   Perera, A G U ^a  

^a GEORGIA STATE UNIVERSITY   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD OF VIEW (FOV); HETEROJUNCTION INTERFACIAL WORKFUNCTION INTERNAL PHOTOEMISSION; MULTIEMITTERS; RESONANT CAVITY;

INFRARED DETECTORS; PHOTOEMISSION; PHOTONS; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SUBSTRATES;

HETEROJUNCTIONS;

EID: 7544225776     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1786342     Document Type: Article

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