Improved performance of 2-μm GaInAs strained quantum-well lasers on InP by increasing carrier confinement

IEEE Photonics Technology Letters

Volumn 13, Issue 5, 2001, Pages 412-414

  Serries, D ^a   Peter, M ^a   Kiefer, R ^a   Winkler, K ^a   Wagner, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Carrier confinement; CW lasers; GaInAs; Optoelectronic devices; Quantum well lasers; Strain

Indexed keywords

CARRIER CONCENTRATION; CONTINUOUS WAVE LASERS; HEAT SINKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL RESOLVING POWER; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

CARRIER CONFINEMENT; QUATERNARY BARRIERS; SEMICONDUCTING GALLIUM INDIUM ARSENIDE; SEPARATE CONFINEMENT;

SEMICONDUCTOR LASERS;

EID: 0035334275     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.920734     Document Type: Article

References (12)

1. Low threshold continuous operation of InGaAs/InGaAsP quantum well lasers at ∼2.0 μm
2. InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 μm
3. 2.0 μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers
4. 1.95 μm compressively strained InGaAs/InGaAsP quantum well DFB laser with low threshold
5. VDI Berichte 1366
6. Antimonide-based mid-infrared quantum-well diode lasers
7. 0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength
8. 2.12 μm InGaAs-InGaAlAs-InP diode lasers grown in solid-source molecular-beam epitaxy
9. Room-temperature 2.2-μm InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy
10. Heterojunction band offsets and effective masses in III-V Quaternary alloys
11. Band lineups and deformation potentials in the model solid theory