Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 261, Issue 1, 2004, Pages 16-21

  Radhakrishnan, K ^a   Yuan, K ^a   Hong, Wang ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

A1. Atomic force microscopy; A1. Metamorphic buffer; A1. Photoluminescence; A1. X ray diffraction; A3. Molecular beam epitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; HIGH ELECTRON MOBILITY TRANSISTORS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

LATTICE MISMATCH; METAMORPHIC BUFFER SCHEMES;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0345602776     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.014     Document Type: Article

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