Heteroepitaxy of In0.53Ga0.47As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications

Microelectronics Journal

Volumn 37, Issue 8, 2006, Pages 700-704

  Ren, Aiguang ^a   Ren, Xiaomin ^a   Wang, Qi ^a   Xiong, Deping ^a   Huang, Hui ^a   Huang, Yongqing ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Heteroepitaxy; LP MOCVD; Mismatch; Scan probe microscope

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION; OPTIMIZATION; PHOTOLUMINESCENCE; PRESSURE EFFECTS; THERMAL EFFECTS; X RAY DIFFRACTION;

HETEROEPITAXY; LOW PRESSURE METALORGANIC; LP-MOCVD; MISMATCH; SCAN PROBE MICROSCOPE (SPM);

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33744508566     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.12.008     Document Type: Article

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