On-wafer monitoring of electron and ion energy distribution at the bottom of contact hole

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 2, 2007, Pages 400-403

  Ohtake, Hiroto ^a   Jinnai, Butsurin ^a   Suzuki, Yuya ^a   Soda, Shinnosuke ^a   Shimmura, Tadashi ^a   Samukawa, Seiji ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON ENERGY LEVELS; ELECTRON TEMPERATURE; SILICA; SILICON WAFERS;

ION ENERGIES; ION ENERGY DISTRIBUTION FUNCTION (IEDF); ON-WAFER PROBE;

CARRIER CONCENTRATION;

EID: 34047182652     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2712200     Document Type: Article

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