Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy

Applied Physics Letters

Volumn 88, Issue 7, 2006, Pages

  Chen, Y H ^a   Sun, J ^a   Jin, P ^a   Wang, Z G ^a   Yang, Z ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL ANISOTROPY (OA); REFLECTANCE DIFFERENCE SPECTROSCOPY; TRANSITION ENERGY; WETTING LAYERS (WL);

ANISOTROPY; ATOMIC FORCE MICROSCOPY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHASE TRANSITIONS; PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 32944466723     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2175489     Document Type: Article

References (20)

1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1999).
2. S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.60.8276 60, 8276 (1999); S. Sanguinetti, T. Mano, M. Oshima, T. Tateno, M. Wakaki, and N. Koguchi, Appl. Phys. Lett. 81, 3067 (2002).
3. S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.60.8276 60, 8276 (1999); S. Sanguinetti, T. Mano, M. Oshima, T. Tateno, M. Wakaki, and N. Koguchi, Appl. Phys. Lett. 81, 3067 (2002).
4. Y. Toda, O. Moriwaki, M. Nishioka, and Y. Arakawa, Phys. Rev. Lett. 82, 4114 (1999).
5. D. G. Deppe and D. L. Huffaker, Appl. Phys. Lett. 77, 3325 (2000).
6. R. V. N. Melnik and M. Willatzen, Nanotechnology 15, 1 (2004).
7. I. Daruka and A.-L. Barabási, Phys. Rev. Lett. 79, 3708 (1997).
8. W. Rudno-RudziÒski, G. SJk, K. Ryczko, R. Kudrawiec, J. Misiewicz, A. Somers, R. Schwertberger, J. P. Reithmaier, and A. Forchel, Appl. Phys. Lett. 86, 101904 (2005).
9. B. Shin, B. Lita, R. S. Goldman, J. D. Phillips, and P. K. Bhattacharya, Appl. Phys. Lett. 81, 1423 (2002).
10. P. Offermans, P. M. Koenraad, J. H. Wolter, K. Pierz, M. Roy, and P. A. Maksym, Physica E (Amsterdam) 26, 236 (2005).
11. Z. Sobiesierskiy, D. I. Westwood, and C. C. Matthai, J. Phys.: Condens. Matter 10, 1 (1998).
12. Y. H. Chen, X. L. Ye, J. Z. Wang, Z. G. Wang, and Z. Yang, Phys. Rev. B 0163-1829 10.1103/PhysRevB.66.195321 66, 195321 (2002); X. Ye, Y. H. Chen, B. Xu, and Z. G. Wang, Mater. Sci. Eng., B 91, 92, 62 (2002).
13. Y. H. Chen, X. L. Ye, J. Z. Wang, Z. G. Wang, and Z. Yang, Phys. Rev. B 0163-1829 10.1103/PhysRevB.66.195321 66, 195321 (2002); X. Ye, Y. H. Chen, B. Xu, and Z. G. Wang, Mater. Sci. Eng., B 91, 92, 62 (2002).
14. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter, Phys. Rev. B 64, 245334 (2001).
15. M. J. da Silva, A. A. Quivy, P. P. González-Borrero, and E. Marega, Jr., J. Cryst. Growth 236, 41 (2002).
16. M. A. Herman and H. Sitter, Molecular Beam Epitaxy: Fundamental and Current Status (Springer, Berlin, 1989), p. 32.
17. F. A. Zhao, Y. H. Chen, X. L. Ye, P. Jin, B. Xu, Z. G. Wang, and C. L. Zhang, J. Phys.: Condens. Matter 16, 7603 (2004).
18. R. Heitz, T. R. Ramachandran, A. Kalburge, Q. Xie, I. Mukhametzhanov, P. Chen, and A. Madhukar, Phys. Rev. Lett. 78, 4071 (1997).
19. T. J. Krzyzewski, P. B. Joyce, G. R. Bell, and T. S. Jones, Surf. Sci. 517, 8 (2002).
20. L. F. Lastras-Martinez, R. E. Balderas-Navarro, A. Lastras-Martinez, and K. Hingerl, Semicond. Sci. Technol. 19, R35 (2004).