The influence of interdiffusion on the binding energy of excitons in InxGa1-xNyAs1-y /GaAs quantum wells

Superlattices and Microstructures

Volumn 37, Issue 4, 2005, Pages 273-280

  Ryczko, K ^a   Sek G ^a   Misiewicz, J ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Exciton binding energy; InGaNAs GaAs quantum wells; Interdiffusion

Indexed keywords

BINDING ENERGY; BOND STRENGTH (CHEMICAL); DIFFUSION; EXCITONS; GROUND STATE; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EXCITON BINDING ENERGY; GAAS QUANTUM WELLS; INGANAS QUANTUM WELLS; INTERDIFFUSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 15344347773     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.01.003     Document Type: Article

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