Electrodeposition of Te onto monocrystalline n- and p-Si(1 0 0) wafers

Electrochimica Acta

Volumn 52, Issue 16, 2007, Pages 5213-5218

  Ivanova, Yu A ^a   Ivanou, D K ^a   Streltsov, E A ^a  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

Electrodeposition; Nucleation mechanism; Photoelectrochemical behavior; Silicon; Tellurium

Indexed keywords

CHRONOAMPEROMETRY; CYCLIC VOLTAMMETRY; ELECTRODEPOSITION; NUCLEATION; PHOTOELECTRONS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; X RAY DIFFRACTION;

MONOCRYSTALLINE; NUCLEATION MECHANISM; PHOTOELECTROCHEMICAL BEHAVIOR;

TELLURIUM;

EID: 34047175365     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2007.02.032     Document Type: Article

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