Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique

Journal of Crystal Growth

Volumn 254, Issue 1-2, 2003, Pages 55-64

  Samoylov, A M ^a   Khoviv, A M ^a   Buchnev, S A ^a   Synorov, Yu V ^b   Dolgopolova, E A ^a  

^a VORONEZH STATE UNIVERSITY   (Russian Federation)

^b VORONEZH STATE UNIVERSITY OF ENGINEERING TECHNOLOGIES   (Russian Federation)

Author keywords

A1. Doping; A1. Phase diagrams; A1. Point defects; A1. Solid solutions; A3. Hot wall epitaxy; B2. Semiconducting lead compounds

Indexed keywords

CARRIER CONCENTRATION; CONDENSATION; CRYSTAL STRUCTURE; DOPING (ADDITIVES); HETEROJUNCTIONS; LATTICE CONSTANTS; LEAD COMPOUNDS; SILICA; X RAY DIFFRACTION ANALYSIS;

ELECTRON PROBE MICROANALYSIS;

THIN FILMS;

EID: 0038285180     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01022-4     Document Type: Article

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