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Volumn 574, Issue 1, 2004, Pages 113-122

A soft-solution electrochemical processing technique for preparing CdTe/n-Si(l 0 0) heterostructures

Author keywords

CdTe; Electrodeposition; Si

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTROCHEMISTRY; ELECTRODEPOSITION; GAMMA RAYS; HETEROJUNCTIONS; SILICON; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 9244246281     PISSN: 15726657     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jelechem.2004.07.030     Document Type: Article
Times cited : (13)

References (55)
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    • (1997) EMIS Datareviews Series No. 17 , vol.17
    • Saminadayar, K.1    Baron, T.2
  • 28
    • 0001956745 scopus 로고
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    • G. Hodes, in: I. Rubinstein (Ed.), Physical Electrochemistry, Marcel Dekker, New York, 1995, p. 515.
    • (1995) Physical Electrochemistry , pp. 515
    • Hodes, G.1
  • 30
    • 9244240078 scopus 로고    scopus 로고
    • M. Schlesinger, M. Paunovic (Eds.), Wiley, New York (Chapter 14)
    • T.E. Schlesinger, in: M. Schlesinger, M. Paunovic (Eds.), Modern Electroplating, Wiley, New York, 2000 (Chapter 14).
    • (2000) Modern Electroplating
    • Schlesinger, T.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.