CdTe(111)B grown on Si(111) by molecular beam epitaxy

Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2346-2348

  Rujirawat, S ^a   Xin, Y ^a   Browning, N D ^a   Sivananthan, S ^a   Smith, David J ^b   Tsen, S C Y ^b   Chen, Y P ^c   Nathan, V ^d  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c EPIR TECHNOLOGIES INC   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SINGLE CRYSTALS; SURFACE PHENOMENA; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

SURFACE RECONSTRUCTION; ZINC TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0032621867     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123846     Document Type: Article

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