Heteroepitaxial PbTe-on-Si pn-junction IR-sensors: Correlations between material and device properties

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1220-1223

  Zimin, Dmitri ^a   Alchalabi, Karim ^a   Zogg, Hans ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Dislocations; Lead chalcogendies; Narrow gap semiconductors; P n junction sensors

Indexed keywords

CRYSTAL LATTICES; EPITAXIAL GROWTH; HALL EFFECT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; SENSORS; SILICON; THERMAL EXPANSION;

CARRIER DIFFUSION; PHOTOVOLTAIC INFRARED SENSORS;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 0036492752     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00340-5     Document Type: Conference Paper

References (12)