Electrodeposition of CdTe thin films onto n-Si(1 0 0): Nucleation and growth mechanisms

Electrochimica Acta

Volumn 50, Issue 6, 2005, Pages 1299-1305

  Gomez H ^a   Henriquez R ^a   Schrebler, R ^a   Cordova R ^a   Ramirez D ^a   Riveros, G ^a,b   Dalchiele, E A ^c  

^a PONTIFICIA UNIVERSIDAD CATÓLICA DE VALPARAÍSO   (Chile)

^b UNIVERSITY OF CHILE   (Chile)

^c Laboratorio de Física   (Uruguay)

Author keywords

Cadmium telluride; Electrodeposition; Monocrystalline silicone substrate; Nucleation and growth mechanism; Rough face

Indexed keywords

ABSORPTION; ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; COMPUTER SIMULATION; DIFFUSION; ELECTRODEPOSITION; ELECTRODES; GROWTH KINETICS; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SILICON; SILICONES; SUBSTRATES;

CALCIUM TELLURIDE; MONOCRYSTALLINE SILICONE SUBSTRATES; NUCLEATION AND GROWTH MECHANISM; ROUGH FACE;

THIN FILMS;

EID: 10644220320     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2004.08.020     Document Type: Article

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