C-V and gate tunneling current characterization of ultra-thin gate oxide MOS (tox=1.3-1.8 nm)

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 63-64

  Choi, Chang Hoon ^a   Goo, Jung Suk ^a   Oh, Tae Young ^a   Yu, Zhiping ^a   Dutton, Robert W ^a   Bayoumi, Amr ^b   Cao, Min ^b   Voorde, Paul Vande ^b   Vook, Dieter ^b  

^a Stanford University   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

CAPACITANCE VOLTAGE CHARACTERISTICS; TRANSIENT ENHANCED DIFFUSION; ULTRA THIN GATE OXIDE;

MOS CAPACITORS;

EID: 0033280046     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)