Evaluating the impact of resistance in carbon nanotube bundles for VLSI interconnect using diameter-dependent modeling techniques

IEEE Transactions on Electron Devices

Volumn 53, Issue 10, 2006, Pages 2460-2466

  Nieuwoudt, Arthur ^a   Massoud, Yehia ^a  

^a RICE UNIVERSITY   (United States)

Author keywords

Carbon nanotube; Interconnect; Resistance

Indexed keywords

CARBON NANOTUBE BUNDLES; COPPER INTERCONNECTS; ELECTROMIGRATION PROBLEMS; INTERCONNECT; INTERCONNECT APPLICATIONS; MODELING TECHNIQUES; NANOTUBE BUNDLES; NANOTUBE DIAMETERS; OHMIC RESISTANCES; ON-CHIP INTERCONNECT; ORDER OF MAGNITUDES; RESISTANCE; RESISTANCE MODELS; VLSI INTERCONNECT;

IMPACT RESISTANCE; INTERCONNECTION NETWORKS; OHMIC CONTACTS; OPTICAL INTERCONNECTS; SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBES;

EID: 33947642463     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.882035     Document Type: Article

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