Technology and reliability constrained future copper interconnects - Part I: Resistance modeling

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 590-597

  Kapur, Pawan ^b   McVittie, James P ^a,b   Saraswat, Krishna C ^a,b  

^a IEEE   (United States)

^b Stanford University   (United States)

Author keywords

Copper resistance; Copper resistivity; Copper diffusion barrier; Electron surface scattering; Interconnect performance; Interconnect temperature

Indexed keywords

COPPER INTERCONNECTS; RESISTANCE MODELING;

COPPER; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRON SCATTERING; INTERFACES (MATERIALS); RELIABILITY; SEMICONDUCTOR DEVICE MODELS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0036539099     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992867     Document Type: Article

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