Impact of electron-phonon scattering on the performance of carbon nanotube interconnects for GSI

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 476-478

  Naeemi, Azad ^a   Meindl, James D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Interconnections; Modeling; Molecular electronics; Quantum wires

Indexed keywords

BACKSCATTERING; CARBON NANOTUBES; DEGRADATION; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON SCATTERING; MOLECULAR PHYSICS; PHONONS; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE; TRANSISTORS;

CARBON NANOTUBE INTERCONNECTS; ELECTRON MEAN-FREE PATH; INTERCONNECTIONS; MOLECULAR ELECTRONICS; SINGLE-WALL CARBON NANOTUBES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 22944446765     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851130     Document Type: Article

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