Toward a new ultraviolet diode laser: Luminescence and p-n junctions in ZnO films

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4644, Issue , 2002, Pages 256-262

  Xiong, Gang ^a   Wilkinson, John ^a   Tuzemen, S ^a   Ucer, K B ^a   Williams, R T ^a  

^a WAKE FOREST UNIVERSITY   (United States)

Author keywords

Exciton; Intrinsic p type; Laser; Luminescence; Ohmic contact; p n junction; ZnO

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; EXCITONS; OHMIC CONTACTS; PHOTOLUMINESCENCE; PLASMAS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SPUTTERING; ULTRAVIOLET DEVICES; ZINC OXIDE;

HALL MEASUREMENT; REACTIVE SPUTTERING; SPUTTERING PLASMA; ULTRAVIOLET DIODE LASER; ZINC OXIDE FILM;

SEMICONDUCTOR LASERS;

EID: 0036029689     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.464143     Document Type: Conference Paper

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