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Volumn 64, Issue 24, 2001, Pages 2452081-2452087
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Ab initio and empirical-potential studies of defect properties in 3C-SiC
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CARBON;
SILICON CARBIDE;
ARTICLE;
CALCULATION;
CHEMICAL ANALYSIS;
ENERGY;
IRRADIATION;
MOLECULAR DYNAMICS;
PHYSICAL CHEMISTRY;
QUALITY CONTROL;
RADIATION INJURY;
SIMULATION;
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EID: 0035894324
PISSN: 01631829
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (109)
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References (35)
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