Highly scalable ALD-deposited hafnium silicate gate stacks for low standby power applications

Materials Research Society Symposium Proceedings

Volumn 917, Issue , 2006, Pages 155-160

  Swerts, Johan ^a   Deweerd, Wim ^b   Wang, Chang Gong ^c   Fedorenko, Yanina ^a   Delabie, Annelies ^b   Shero, Eric ^c   Zhao, Chao ^b   Maes, Jan Willem ^a   De Gendt, Stefan ^b   Wilk, Glen ^c  

^a ASM BELGIUM   (Belgium)

^b IMEC   (Belgium)

^c ASM AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; STANDBY POWER SYSTEMS; THERMODYNAMIC STABILITY;

EQUIVALENT OXIDE THICKNESS (EOT); GATE LEAKAGE; GATE STACKS; HAFNIUM SILICATE;

GATES (TRANSISTOR);

EID: 33947630857     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0917-e11-04     Document Type: Conference Paper

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