1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy

Electronics Letters

Volumn 40, Issue 3, 2004, Pages 177-179

  Liu, P W ^a   Liao, G H ^a   Lin, H H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CURRENT DENSITY; ETCHING; HIGH TEMPERATURE EFFECTS; LASER BEAM EFFECTS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SPONTANEOUS EMISSION; WETTING;

BANDGAP ENERGY; WET-ETCHING;

QUANTUM WELL LASERS;

EID: 1242298648     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040119     Document Type: Article

References (7)

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3. Liu, P.W., Lee, M.H., Lin, H.H., and Chen, J.R.: 'Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy', Electron. Lett., 2002, 38, pp. 1354-1355
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