Uncooled 2.5 Gb/s operation of 1.3 μm GaInNAs DQW lasers over a wide temperature range

Optics Express

Volumn 14, Issue 7, 2006, Pages 2753-2759

  Wei, Yongqiang ^a   Gustavsson, Johan S ^a   Sadeghi, Mahdad ^a   Wang, Shumin ^a   Larsson, Anders ^a   Savolainen, Pekka ^b   Melanen, Petri ^b   Sipilä, Pekko ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Modulight Inc   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

MODULATION; MOLECULAR BEAM EPITAXY; QUANTUM WELL LASERS; THERMAL EFFECTS; VOLTAGE CONTROL; WAVEGUIDES;

CONSTANT MODULATION VOLTAGE; GAINNAS DQW LASERS; OUTPUT POWER; SHORT CAVITY (250 ΜM) LASERS; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 33645513803     PISSN: 10944087     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.14.002753     Document Type: Article

References (10)

1. K. Uomi, M. Mukaikubo, H. Yamamoto, K. Nakahara, K. Motoda, K. Okamoto, Y. Sakuma, H. Singh, R. Washino, M. Aoki, and K. Uchida, "10 Gbit/s InGaAlAs uncooled directly modulated MQW-DFB lasers for SONET and Ethernet applications," Proc. Int. Conf. InP and Related Materials, 637-642 (2005).
2. R. Paoletti, M. Agretsi, D. Bertone, L. Bruschi, A. Buccieri, R. Cainpi, C. Dorigoni, P. Gotta, M. Liotti, G. Magnetti, P. Montangero, G. Morello, C. Rigo, E. Riva, D. Soderstrom, S. Stano, P. Valenti, M. Vallone, and M. Meliga, "High reliability and high yield 1300 nm InGaAlAs directly modulated ridge waveguide Fabry-Perot lasers, operating at 10 Gb/s, up to 110°C, with constant current swing," Proc. Optical Fiber Conference, postdeadline paper, PDF 15 (2005).
3. M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, "GaInNAs: a novel material for long wavelength semiconductor lasers," IEEE J. Sel. Top. Quantum Electron. 3, 719-730 (1997).
4. B. Dagens, A. Martinez, D. Make, O. Le Gouezigou, J.-G. Provost, V. Sallet, K. Merghem, J.-C. Harmand, A. Ramdane, and B. Thedrez, "Floor free 10 Gb/s transmission with directly modulated GaInNAs-GaAs 1.35 μm laser for metropolitan applications," IEEE Photon. Techn. Lett. 17, 971-973 (2005).
5. D. Gollub, S. Moses, and A. Forchel, "Comparison of GaInNAs laser diodes based on two to five quantum wells," IEEE J. Quantum Electron. 40, 337-343 (2004).
6. Y. Q. Wei, M. Sadeghi, S. M. Wang, P. Modh, and A. Larsson, "High performance 1.28 μm GaInNAs double quantum well lasers," Electron. Lett. 41, 1328-1329 (2005).
7. S. M. Wang, Y. Q. Wei, X. D. Wang, Q. X. Zhao, M. Sadeghi, and A. Larsson, "Very low threshold current density 1.3 μm GaInNAs single quantum well lasers grown by molecular beam epitaxy," J. Crystal Growth 278, 734-738 (2005).
8. N. Tansu and L. J. Mawst, "The role of hole-leakage in 1300-nm InGaAsN quantum well lasers," Appl. Phys. Lett. 82, 1500 (2003).
9. R. Fehse, S. Tomic, A. R. Adams, S. J. Sweeney, E. P. OReilly, A. Andreev, and H. Riechert, "A quantitative study of radiative, Auger, and defect related recombination processes in 1.3 μm GaInNAs-based quantum well lasers," IEEE J. Sel. Top. Quantum Electron. 8, 801 (2002).
10. Y. Q. Wei, J. S. Gustavsson, A. Haglund, P. Modh, M. Sadeghi, S. M. Wang, and A. Larsson, "High frequency modulation and bandwidth limitations of OaInNAs double quantum well lasers," Appl. Phys. Lett. 88, 051103 (2006).