Microscopic simulation of semiconductor lasers at telecommunication wavelengths

Optical and Quantum Electronics

Volumn 38, Issue 12-14, 2006, Pages 1005-1009

  Thranhardt A ^a   Buckers C ^a   Schlichenmaier, C ^a   Kuznetsova, I ^a   Koch, S W ^a   Hader, J ^b   Moloney, J V ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b UNIVERSITY OF ARIZONA   (United States)

Author keywords

Carrier scattering; Dilute nitrides; GaAsSb; Microscopic gain calculation; Quantum well lasers; Telecommunication wavelength

Indexed keywords

CARRIER SCATTERING; DILUTE NITRIDES; MICROSCOPIC GAIN CALCULATION; TELECOMMUNICATION WAVELENGTH;

BAND STRUCTURE; COMPUTER SIMULATION; NITRIDES; OPTICAL COMMUNICATION; SEMICONDUCTING GALLIUM COMPOUNDS;

QUANTUM WELL LASERS;

EID: 33947245456     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-006-9056-2     Document Type: Conference Paper

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