Type I-type II transition in InGaAs-GaNAs heterostructures

Applied Physics Letters

Volumn 86, Issue 8, 2005, Pages 1-3

  Schlichenmaier, C ^a   Gruning H ^a   Thranhardt A ^a   Klar, P J ^a   Kunert, B ^a   Volz, K ^a   Stolz, W ^a   Heimbrodt, W ^a   Meier, T ^a   Koch, S W ^a   Hader, J ^b   Moloney, J V ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EQUATIONS OF MOTION; LASERS; LIGHT POLARIZATION; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

OPTICAL INTERBAND TRANSITIONS; OPTICAL SUSCEPTIBILITY; PHOTOMODULATED REFLECTANCE; PHOTOREFLECTANCE SPECTRA;

HETEROJUNCTIONS;

EID: 20144389799     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1870132     Document Type: Article

References (24)

1. Semicond. Sci. Technol. 17, special issue: " III-N-V Semiconductor Alloys. " (2002).
2. IEE Proc.: Optoelectron. 150, special issue: " Physics and Technology of Dilute Nitrides for Optical Communications. " (2003).
3. J. Phys.: Condens. Matter 16, special issue: " Articles on Dilute Nitrides. " (2004).
4. P. J. Klar, Prog. Solid State Chem. 31, 301 (2003).
5. H. Grüning, P. J. Klar, W. Heimbrodt, S. Nau, B. Kunert, K. Volz, W. Stolz, and G. Weiser, Photonics Spectra 21, 666 (2004).
6. E. Y. Wang, W. A. Albers, Jr., and C. E. Bleil, in II-VI Semiconducting Compounds, 1967 International Conference, edited by, D. G. Thomas, (W. A. Benjamin, Inc., New York, 1967).
7. J. L. Shay, R. E. Nahory, and C. K. N. Patel, Phys. Rev. Lett. 21, 1569 (1968).
8. J. Misiewicz, P. Sitarek, G. Sek, and R. Kudrawiec, Materials Science-Poland 21, 263 (2003).
9. M. Hetterich, A. Grau, A. Yu. Egorov, and H. Riechert, J. Appl. Phys. 0021-8979 10.1063/1.1591078 94, 1810 (2003); M. Hetterich, A. Grau, A. Yu. Egorov, and H. Riechert, J. Phys.: Condens. Matter 16, S3151 (2004).
10. M. Hetterich, A. Grau, A. Yu. Egorov, and H. Riechert, J. Appl. Phys. 0021-8979 10.1063/1.1591078 94, 1810 (2003); M. Hetterich, A. Grau, A. Yu. Egorov, and H. Riechert, J. Phys.: Condens. Matter 16, S3151 (2004).
11. R. Kudrawiec, E.-M. Pavelescu, J. Andrzejewski, J. Misiewicz, A. Gheorghiu, T. Jouhti, and M. Pessa, J. Appl. Phys. 96, 2909 (2004).
12. J. Misiewicz, R. Kudrawiec, K. Ryczko, G. Sek, A. Forchel, J. C. Harmand, and M. Hammar, J. Phys.: Condens. Matter 16, S3071 (2004).
13. H. Haug and S. W. Koch, Quantum Theory of the Optical and Electronic Properties of Semiconductors, 4th ed. (World Scientific, Singapore, 2004), Eq. (12.27 ff., 12.6, 12.30, 12.55, 21.17 ff.).
14. E. P. O'Reilly and A. Lindsay, Phys. Status Solidi B 216, 131 (1999).
15. A. Lindsay and E. P. O'Reilly, Solid State Commun. 112, 443 (1999).
16. The band structure parameters were taken from Landolt-Börnstein, Vol. 41 A1, Semiconductors: Group IV Elements, IV-IV and III-V Compounds, edited by, O. Madelung, U. Rössler, and, M. Schulz, (Springer, Berlin, 2001/2); and W. W. Chow and S. W. Koch, Semiconductor-Laser Fundamentals (Springer, Berlin, 1999). The N-influence on the gap energy was extracted from experiment. Parameters are similar to Ref.. For the band alignment, 36% of the gap difference Δlayer = Eg,GaAs - Eg,layer are attributed to the valence band and 64% to the conduction band. In case of GaNAs, an offset component x Voff, Voff =1.5 eV, is added to the valence band, to account for the influence of the anticrossing.
17. The band structure parameters were taken from Landolt-Börnstein, Vol. 41 A1, Semiconductors: Group IV Elements, IV-IV and III-V Compounds, edited by, O. Madelung, U. Rössler, and, M. Schulz, (Springer, Berlin, 2001/2); and W. W. Chow and S. W. Koch, Semiconductor-Laser Fundamentals (Springer, Berlin, 1999). The N-influence on the gap energy was extracted from experiment. Parameters are similar to Ref.. For the band alignment, 36% of the gap difference Δlayer = Eg,GaAs - Eg,layer are attributed to the valence band and 64% to the conduction band. In case of GaNAs, an offset component x Voff, Voff =1.5 eV, is added to the valence band, to account for the influence of the anticrossing.
18. The band structure parameters were taken from Landolt-Börnstein, Vol. 41 A1, Semiconductors: Group IV Elements, IV-IV and III-V Compounds, edited by, O. Madelung, U. Rössler, and, M. Schulz, (Springer, Berlin, 2001/2); and W. W. Chow and S. W. Koch, Semiconductor-Laser Fundamentals (Springer, Berlin, 1999). The N-influence on the gap energy was extracted from experiment. Parameters are similar to Ref.. For the band alignment, 36% of the gap difference Δlayer = Eg,GaAs - Eg,layer are attributed to the valence band and 64% to the conduction band. In case of GaNAs, an offset component x Voff, Voff =1.5 eV, is added to the valence band, to account for the influence of the anticrossing.
19. S. Tomić, E. P. O'Reilly, P. J. Klar, H. Grüning, W. Heimbrodt, W. M. Chen, and I. A. Buyanova, Phys. Rev. B 69, 245305 (2004).
20. M. Kira, F. Jahnke, W. Hoyer, and S. W. Koch, Prog. Quantum Electron. 23, 189 (1999), Eq. (84, 112 ff., 8, 40, 43, 47, 107 ff.).
21. J. Hader, S. W. Koch, J. V. Moloney, and E. P. O'Reilly, Appl. Phys. Lett. 76, 3685 (2000).
22. M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schäfer, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Yu. Egorov, and H. Riechert, Appl. Phys. Lett. 78, 3009 (2001).
23. J. Hader, S. W. Koch, and J. V. Moloney, Solid-State Electron. 47, 323 (2003).
24. H. Grüning, K. Kohary, S. D. Baranovskii, O. Rubel, P. J. Klar, A. Ramakrishnan, G. Ebbinghaus, P. Thomas, W. Heimbrodt, W. Stolz, and W. W. Rühle, Phys. Status Solidi C 1, 109 (2004).