Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance

IEEE Journal of Quantum Electronics

Volumn 39, Issue 1, 2003, Pages 120-129

  Witzigmann, Bernd ^a   Hybertsen, Mark S ^b   Reynolds Jr , C Lewis ^b   Belenky, Gregory L ^c   Shterengas, Leon ^c   Shtengel, Gleb E ^b,d  

^a Agere Systems   (United States)

^b AGERE SYSTEMS   (United States)

^c STONY BROOK UNIVERSITY   (United States)

^d Kodeos Communications   (United States)

Author keywords

Laser modulation response; Laser simulation; Laser threshold current; Optical gain; Semiconductor quantum well laser diode

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; CURRENT DENSITY; LASER MODES; LIGHT MODULATION; NATURAL FREQUENCIES; OPTOELECTRONIC DEVICES; QUANTUM THEORY; SEMICONDUCTOR DOPING; TEMPERATURE;

AUGER COEFFICIENTS; LASER MODULATION RESPONSE; LASER THRESHOLD CURRENT; MICROSCOPIC SIMULATION; OPTICAL GAIN;

QUANTUM WELL LASERS;

EID: 0037247461     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.806195     Document Type: Article

References (35)

1. S. Seki, H. Oohashi, H. Sugiura, T. Hirono, and K. Yokoyama, "Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3 μm InP-based strained-layer quantum-well lasers," IEEE J. Quantum Electron., vol. 32, pp. 1478-1486, 1996.
2. J. Piprek, P. Abraham, and J. E. Bowers, "Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers," IEEE J. Quantum Electron., 36, pp. 366-374, 2000.
3. T. Keating, X. Jin, S. L. Chuang, and K. Hess, "Temperature dependence of electrical and optical modulation responses of quantum well lasers," IEEE J. Quantum Electron., vol. 35, pp. 1526-1534, 1999.
4. A. A. Bernussi, H. Temokin, D. L. Coblentz, and R. A. Logan, "Effect of barrier recombination on the high temperature performance of quaternary multiquantum well lasers," Appl. Phys. Lett., vol. 66, pp. 67-69, 1995.
5. J. M. Pikal, C. S. Menoni, P. Thiagarajan, G. Y. Robinson, and H. Temkin, "Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers," Appl. Phys. Lett., vol. 76, pp. 2659-2661, 2000.
6. R. F. Kazarinov and M. R. Pinto, "Carrier transport in laser heterostructures," IEEE J. of Quantum Electron., vol. 30, pp. 49-53, 1994.
7. 0 in 1.3 μm semiconductor lasers," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 250-263, 1995.
8. 1-y," J. Appl. Phys., vol. 53, pp. 74-92, 1982.
9. A. F. Phillips, S. J. Sweeney, A. R. Adams, and P. J. A. Thijs, "The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 401-412, 1999.
10. M. Nido, K. Naniwae, J. Shimizu, S. Murata, and A. Suzuki, "Analysis of differential gain in InGaAs-InGaAsP compressive and tensile strained quantum-well lasers and its application for estimation of high-speed modulation limit," IEEE J. Quantum Electron., vol. 29, pp. 885-889, 1993.
11. K. Uomi, "Modulation-doped multi-quantum well (MD-MQW) lasers. I. Theory," Jpn. J. Appl. Phys., vol. 29, pp. 81-87, 1990.
12. S. Seki, K. Yokoyama, and P. Sotirelis, "Theoretical analysis of high-temperature characteristics of 1.3-μm InP-based quantum-well lasers," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 264-274, 1995.
13. M. Grupen and K. Hess, "Simulation of carrier transport and nonlinearities in quantum-well laser diodes," IEEE J. Quantum Electron., vol. 34, pp. 120-140, 1998.
14. M. A. Alam, M.S. Hybertsen, R. K. Smith, and G. A. Baraff, "Simulation of semiconductor quantum well lasers," IEEE Trans. Electron Devices, vol. 47, pp. 1917-1925, 2000.
15. M. S. Hybertsen, B. Witzigmann, M. A. Alam, and R. K. Smith, "Role of carrier capture in microscopic simulation of multi-quantum-well semi-conductor laser diodes," J. Comput. Electron., vol. 1, pp. 113-118, 2002.
16. C. H. Henry, R. A. Logan, F. R. Merritt, and J. P. Luongo, "The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers," IEEE J. Quantum Electron., vol. QE-19, pp. 947-952, 1983.
17. C. H. Henry, B. F. Levine, R. A. Logan, and C. G. Bethea, "Minority carrier lifetime and luminescence efficiency of 1.3 mm InGaAsP-InP double heterostructure layers," IEEE J. Quantum Electron., vol. QE-19, pp. 905-912, 1983.
18. A. Mozer, K. M. Romanek, O. Hildebrand, W. Schmid, and M. H. Pilkuhn, "Losses in GaInAs(P)/InP and GaAlSb(As)/GaSb Lasers-The influence of the split-off valence band," IEEE J. Quantum Electron., vol. QE-19, pp. 913-916, 1983.
19. G. E. Shtengel, D. A. Ackerman, P. A. Morton, E. J. Flynn, and M. S. Hybertsen, "Impedance-corrected carrier lifetime measurements in semiconductor lasers," Appl. Phys. Lett., vol. 67, pp. 1506-1508, 1995.
20. N. A. Gun'ko, A. S. Polkovnikov, and G. G. Zegrya, "A numerical calculation of auger recombination coefficients for InGaAsP/InP quantum well heterostructures," Semiconductors, vol. 34, pp. 448-452, 2000. [Online] Available: http://www.ioffe.rssi.ru/SVA/NSM.
21. M. S. Hybertsen, M. A. Alam, G. E. Shtengel, G. L. Belenky, C. L. Reynolds, Jr., D. V. Donetsky, R. K. Smith, G. A. Baraff, R. F. Kazarinov, J. D. Wynn, and L. E. Smith, "Role of p-doping profile in InGaAsP multi-quantum well lasers: Comparison of simulation and experiment," Proc. SPIE, vol. 3625, pp. 524-534, 1999.
22. M. S. Hybertsen, M. A. Alam, R. K. Smith, G. E. Shtengel, C. L. Reynolds, Jr., and G. L. Belenky, "Simulation of carrier dynamics in multi-quantum well lasers," Proc. SPIE, vol. 3944, 486-491, 2000.
23. M. A. Alam, and M. S. Lundstrom, "Effects of carrier heating on laser dynamics-A Monte Carlo study," IEEE J. Quantum Electron., vol. 33, pp. 2209-2220, 1997.
24. G. L. Belenky, C. L. Reynolds Jr., D. V. Donetsky, G. E. Shtengel, M. S. Hybertsen, M. A. Alam, G. A. Baraff, R. K. Smith, R. F. Kazarinov, J. Winn, and L. E. Smith, "Role of p-doping profile and regrowth on the static characteristics of 1.3 μm MQW InGaAsP-InP lasers: Experiment and modeling," IEEE J. Quantum Electron., vol. 35, pp. 1515-1519, 1999.
25. G. L. Belenky, C. L. Reynolds, Jr., L. Shterengas, M. S. Hybertsen, D. V. Donetsky, G. E. Shtengel, and S. Luryi, "Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3 μm InGaAsP-InP multiple-quantum-well lasers," IEEE Photon. Technol. Lett., vol. 12, pp. 969-971, 2000.
26. G. L. Belenky, R. F. Kazarinov, J. Lopata, S. Luryi, T. Tanbun-Ek, and P. Garbinski, "Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures," IEEE Trans. Electron Devices, vol. 42, pp. 215-218, 1995.
27. H. Yamazaki, A. Tomita, and M. Yamaguchi, "Evidence of nonuniform carrier distribution in multiple quantum well lasers," Appl. Phys. Lett., vol. 71, pp. 767-769, 1997.
28. W. F. Brinkman and P. A. Lee, "Coulomb effects on the gain spectrum of semiconductors," Phys. Rev. Lett., vol. 31, pp. 237-240, 1973.
29. W. Bardyszewski and D. Yevick, "Stimulated recombination in highly excited GaAs," Phys. Rev. B, vol. 39, pp. 10 839-10 851, 1989.
30. G. L. Belenky, L. Shterengas, C. L. Reynolds, Jr., M. W. Focht, M. S. Hybertsen, and B. Witzigmann, "Direct measurement of lateral carrier leakage in 1.3 μm InGaAsP MQW CMBH lasers," IEEE J. Quantum Electron., vol. 38, pp. 1276-1281, 2002.
31. R. Nagarajan, M. Ishikawa, T. Fukushima, J. G. R. S. Geels, and J. E. Bowers, "High speed quantum-well lasers and carrier transport effects," IEEE J. Quantum Electron., vol. 28, pp. 1990-2007, 1992.
32. N. Tessler and G. Eisenstein, "On carrier injection and gain dynamics in quantum well lasers," IEEE J. Quantum Electron., vol. 29, pp. 1586-1595, 1993.
33. M. Ishikawa, R. Nagarajan, T. Fukushima, J. G. Wasserbauer, and J. E. Bowers, "Long wavelength high-speed semiconductor lasers with carrier transport effects," IEEE J. Quantum Electron., vol. 28, pp. 2230-2240, 1992.
34. I. F. Lealman, M. J. Harlow, and S. D. Perrin, "Effect of Zn doping on modulation bandwidth of 1.55 μm InGaAs InGaAsP multiple quantum-well lasers," Electron. Lett., vol. 29, pp. 1197-1198, 1993.
35. B. Witzigmann and M. S. Hybertsen, "Simulation of temperature dependent modulation response in multi-quantum-well lasers," SPIE Proc., vol. 4646, pp. 313-319, 2002.