Time-resolved photoluminescence of type-I and type-II (GaIn)As Ga(NAs) heterostructures

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 16, 2005, Pages

  Hantke, K ^a   Heber, J D ^a   Schlichenmaier, C ^a   Thranhardt A ^a   Meier, T ^a   Kunert, B ^a   Volz, K ^a   Stolz, W ^a   Koch, S W ^a   Ruhle W W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28644441906     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.165320     Document Type: Article

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26. Parameters used for the fit are: x=0.48%: QW 10.35 nm, (Ga0.789 In0.211) As Ga (N0.0043 As0.9957); x=0.72%: QW 10 nm, (Ga0.781 In0.219) As Ga (N0.0087 As0.9913); x=1.25%: QW 9.6 nm, (Ga0.768 In0.232) As Ga (N0.0116 As0.9884); x=2.2%: QW 9.5 nm, (Ga0.768 In0.232) As Ga (N0.0188 As0.9812).
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