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Applied Physics Letters

Volumn 84, Issue 1, 2004, Pages 1-3

Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers

(6) Gerhardt, N C a Hofmann, M R a Hader, J b Moloney, J V b Koch, S W c Riechert, H d

a RUHR UNIVERSITY BOCHUM (Germany)

b UNIVERSITY OF ARIZONA (United States)

c PHILIPPS UNIVERSITY MARBURG (Germany)

d INFINEON TECHNOLOGIES AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DATA REDUCTION; ELECTRONS; FABRY-PEROT INTERFEROMETERS; GAIN MEASUREMENT; MICROSCOPIC EXAMINATION; SEMICONDUCTING GALLIUM ARSENIDE; TELECOMMUNICATION;

INJECTION CURRENTS; OPTICAL GAINS;

SEMICONDUCTOR LASERS;

EID: 0942267473 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1638628 Document Type: Article

Times cited : (22)

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- 2 due to an unconfined lh-state. Even this marginal TM-contribution is included in the theory.

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