Spectroscopic investigations of GaAsSb/GaAs based structures for 1.3 μm VCSEL applications

IEE Proceedings: Optoelectronics

Volumn 152, Issue 2, 2005, Pages 110-117

  Blume, G ^a   Hosea, T J C ^a   Sweeney, S J ^a   Johnson, S R ^b   Wang, J B ^b   Zhang, Y H ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; LIGHT INTERFERENCE; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SIGNAL TO NOISE RATIO;

BLUE SHIFT; LASER EXCITATION; LOW ENERGY INTERFERENCE OSCILLATIONS (LEIO); VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTOR QUANTUM WELLS;

EID: 18444412275     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20055024     Document Type: Article

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