High-performance GaAs MESFET's with advanced LDD structure for digital, analog, and microwave applications

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 38-47

  Nakajima, Shigeru ^a   Yanagisawa, Masaki ^a   Tsumura, Eiji ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

GaAs; High speed integrated circuit; MESFET; Semiconductor device fabrication

Indexed keywords

DIGITAL INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; FLIP FLOP CIRCUITS; GATES (TRANSISTOR); LINEAR INTEGRATED CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

LIGHTLY DOPED DRAIN (LDD) STRUCTURES;

MESFET DEVICES;

EID: 0032760787     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737439     Document Type: Article

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