High breakdown voltage (Al0.3Ga0.7)0.5 In0.5 P/InGaAs quasi-enhancement-mode pHEMT with field-plate technology

IEEE Electron Device Letters

Volumn 26, Issue 10, 2005, Pages 701-703

  Chiu, Hsien Chin ^a   Chiang, Yi Chyun ^a   Wu, Chan Shin ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b WIN SEMICONDUCTORS CORP   (Taiwan)

Author keywords

(Al0.3Ga0.7)0.5In0.5P; Enhancement mode (E mode); Field plate; Pseudomorphic high electron mobility transistors (pHEMTs)

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POWER MEASUREMENT; MICROWAVE DEVICES; SCATTERING PARAMETERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

ENHANCEMENT MODE (E-MODE); FIELD PLATE; HIGH BREAKDOWN VOLTAGE; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMTS);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 27144535722     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.855403     Document Type: Article

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