A process for the formation of submicron V-gate by micromachined V-grooves using GaInP/GaAs selective etching technique

IEEE Electron Device Letters

Volumn 22, Issue 9, 2001, Pages 420-422

  Chiu, Hong Wei ^b   Ho, Nien Show ^b   Lu, Shey Shi ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Anisotropic etching; Etching selectivity; FET; GaInP; Micromachining; Submicron gate; V groove

Indexed keywords

ANISOTROPIC WET ETCHING; GALLIUM INDIUM PHOSPHIDE; ULTRAVIOLET PHOTOLITHOGRAPHY; V-GATE STRUCTURE; V-GROOVES;

CRYSTAL GROWTH; ETCHING; GATES (TRANSISTOR); MESFET DEVICES; MICROMACHINING; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; ULTRAVIOLET RADIATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035446925     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.944326     Document Type: Article

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