Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 384-388

  Tan, S W ^a   Hsu, M K ^a   Lin, A H ^a   Chu, M Y ^a   Chen, W T ^a   Lour, W S ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLABLE NOTCH ANGLE; INDIUM GALLIUM PHOSPHIDE; SHORT CHANNEL EFFECTS;

COMPUTER SIMULATION; DIFFUSION; ELECTRON BEAM LITHOGRAPHY; ETCHING; HETEROJUNCTIONS; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; THERMOOXIDATION; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 1642348587     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/015     Document Type: Article

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