New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD

IEEE Electron Device Letters

Volumn 20, Issue 6, 1999, Pages 304-306

  Lour, W S ^a   Chang, W L ^b   Shih, Y M ^a   Liu, W C ^b  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

PLANAR-DOPED BARRIERS;

FIELD EFFECT TRANSISTORS;

EID: 0032632273     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.767106     Document Type: Article

References (7)

1. J. M. Shannon, "A majority-carrier camel diode," Appl. Phys. Lett., vol. 35, pp. 63-65, 1979.
2. R. E. Thorne, S. L. Su, R. J. Fisccher, W. F. Kopp, W. G. Lyons, P. A. Miller, and H. Morkoc, "Analysis of camel gate FET's (CAMFET's)," IEEE Trans. Electron Devices, vol. ED-30, pp. 212-227, Mar. 1983.
3. D. A. Figueredo, M. P. Zurakowski, S. S. Elliott, W. J. Anklam, and S. R. Sloan, "GaAs semiconductor-insulator field effect transistor with a planar-doped barrier gate," Appl. Phys. Lett., vol. 52, no. 17, pp. 1395-1397, 1988.
4. W. S. Lour, W. C. Liu, J. H. Tsai, and L. W. Laih, "High-performance camel-gate field effect transistor using high-medium-low doped structure," Appl. Phys. Lett., vol. 67, no. 18, pp. 2636-2638, 1995.
5. W. S. Lour, J. H. Tsai, L. W. Laih, and W. C. Liu, "Influence of channel doping-profile on camel-gate field effect transistors," IEEE Trans. Electron Devices, vol. 43, pp. 871-876, June 1996.
6. W. S. Lour, "High-gain, low-offset-voltage and zero potential spike by InGaP/GaAs δ-doped single heterojunction bipolar transistor (δ-SHBT)," IEEE Trans. Electron Devices, vol. 44, pp. 346-348, Feb. 1997.
7. 0.49 P air-bridge gate structure grown by GSMBE," IEEE Electron Device Lett., vol. 16, pp. 518-520, Nov. 1995.