The effect of gate recess profile on device performance of Ga0.51in0.49P/In0.2Ga0.8as doped-channel FET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 48-54

  Lu, Shey Shi ^a   Meng, Chin Chun ^b   Lin, Yo Sheng ^c   Lan, Hai ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Breakdown voltage; Doped channel fet; Galnp; Gate recess

Indexed keywords

CRYSTAL GROWTH; ELECTRIC BREAKDOWN OF SOLIDS; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; MISFET DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

DOPED-CHANNEL FIELD EFFECT TRANSISTORS (DCFET);

GATES (TRANSISTOR);

EID: 0032713670     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737440     Document Type: Article

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