Optimization of active channel thickness of mm-wavelength GaAs MESFET's by using a nonlinear I-V model

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 299-303

  Ahmed, Mansoor M ^a  

^a GIK INSTITUTE OF ENGINEERING SCIENCES AND TECHNOLOGY   (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC SPACE CHARGE; ELECTRODES; GATES (TRANSISTOR); SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

ACTIVE CHANNELS;

MESFET DEVICES;

EID: 0033896393     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822271     Document Type: Article

References (15)

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