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Chemistry Bulletin / Huaxue Tongbao

Volumn 69, Issue 5, 2006, Pages 393-398

Accurate measurements of the oxide thickness for ultra-thin SiO2 on Si by using XPS

(6) Liu, Fen a Qiu, Limei a Zhao, Liangzhong a Wang, Hai b Kan, Ying b Song, Xiaoping b

a INSTITUTE OF CHEMISTRY (China)

b National Research Centre for Certified Reference Materials (China)

Author keywords

Attenuation length; Gate oxide; SiO2, thickness measurement; XPS

Indexed keywords

EID: 33947178485 PISSN: 04413776 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (4)

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