An analytic model to account for quantum-mechanical effects of MOSFETs using a parabolic potential well approximation

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2082-2089

  He, Jin ^a,b   Chan, Mansun ^a,c   Zhang, Xing ^a,b   Wang, Yangyuan ^a,b  

^a IEEE   (China)

^b PEKING UNIVERSITY   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Device physics; MOSFETs; Quantum mechanical effects (QMEs); Very large scale integration (VLSI)

Indexed keywords

ANALYTIC MODELING; ANALYTIC SOLUTION; DEVICE PHYSICS; QUANTUM MECHANICAL EFFECTS (QME);

CIRCUIT SIMULATION; ELECTRON ENERGY LEVELS; POISSON EQUATION; SCHRODINGER EQUATION; SEMICONDUCTOR DEVICE MODELS; VLSI CIRCUITS;

MOSFET DEVICES;

EID: 33947136778     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.880359     Document Type: Article

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