A three-transistor threshold voltage model for halo processes

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 113-116

  Rios, Rafael ^a   Shih, Wei Kai ^a   Shah, Atul ^a   Mudanai, Sivakumar ^a   Packan, Paul ^a   Sandford, Tracy ^a   Mistry, Kaizad ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; MATHEMATICAL MODELS; MOSFET DEVICES; SEMICONDUCTOR DOPING;

HALO PROCESSES;

THRESHOLD VOLTAGE;

EID: 0036929393     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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