Asymmetrically-doped buried layer (ADB) structure CMOS for low-voltage mixed analog-digital applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 102-103

  Miyamoto, Masafumi ^a   Toyota, Kenji ^a   Seki, Koichi ^a   Nagano, Takahiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; CURRENT VOLTAGE CHARACTERISTICS; DIGITAL INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); ION IMPLANTATION; LINEAR INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

ANALOG CIRCUITS; ASYMMETRICALLY DOPED BURIED LAYER; CMOS STRUCTURE; DRAIN CURRENT; DRAIN OUTPUT RESISTANCE; HIGH SPEED DIGITAL CIRCUITS; SATURATION CURRENT; THRESHOLD VOLTAGE;

CMOS INTEGRATED CIRCUITS;

EID: 0029714797     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)