Study of TiO2 and SiO2/TiO2 as gate dielectric materials

ECS Transactions

Volumn 4, Issue 1, 2007, Pages 409-416

  Albertin, K F ^a   Valle, M A ^a   Pereyra, I ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATES (TRANSISTOR); LEAKAGE CURRENTS; PERMITTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; TITANIUM DIOXIDE;

EFFECTIVE OXIDE THICKNESS (EOT); ELIPSOMETRY MEASUREMENTS; GATE DIELECTRIC MATERIALS; INTERFACE QUALITY;

MOS CAPACITORS;

EID: 33847633364     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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