-
1
-
-
0032181962
-
"Growth and applications of Group III-nitrides"
-
Oct
-
O. Ambacher, "Growth and applications of Group III-nitrides," J. Phys. D, Appl. Phys., vol. 31, no. 20, pp. 2653-2710, Oct. 1998.
-
(1998)
J. Phys. D, Appl. Phys.
, vol.31
, Issue.20
, pp. 2653-2710
-
-
Ambacher, O.1
-
2
-
-
33749257341
-
"A K-band AlGaN/GaN HFET MMIC amplifier on sapphire using novel superlattice cap layer"
-
in Jun
-
M. Nishijima, T. Murata, Y. Hirose, M. Hikita, N. Negoro, H. Sakai, Y. Uemoto, K. Inoue, T. Tanaka, and D. Ueda, "A K-band AlGaN/GaN HFET MMIC amplifier on sapphire using novel superlattice cap layer," in 2005 IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2005, pp. 299-302.
-
(2005)
2005 IEEE MTT-S Int. Microw. Symp. Dig.
, pp. 299-302
-
-
Nishijima, M.1
Murata, T.2
Hirose, Y.3
Hikita, M.4
Negoro, N.5
Sakai, H.6
Uemoto, Y.7
Inoue, K.8
Tanaka, T.9
Ueda, D.10
-
3
-
-
30944469459
-
"Highly reliable 250WGaN high electron mobility transistor power amplifier"
-
Jul
-
T. Kikkawa, "Highly reliable 250WGaN high electron mobility transistor power amplifier," Jpn. J. Appl. Phys., vol. 44, no. 7A, pp. 4896-4901, Jul. 2005.
-
(2005)
Jpn. J. Appl. Phys.
, vol.44
, Issue.7 A
, pp. 4896-4901
-
-
Kikkawa, T.1
-
4
-
-
0035279239
-
"Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss"
-
Mar
-
S.-H. Lee, H.-H. Jeong, S.-B. Bae, H.-C. Choi, J.-H. Lee, and Y.-H. Lee, "Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 524-529, Mar. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.3
, pp. 524-529
-
-
Lee, S.-H.1
Jeong, H.-H.2
Bae, S.-B.3
Choi, H.-C.4
Lee, J.-H.5
Lee, Y.-H.6
-
5
-
-
0036920940
-
"Electromechanical coupling coefficient for surface acoustic waves in GaN-on-sapphire"
-
Dec
-
R. Rimeika, D. Ciplys, M. S. Shur, R. Gaska, M. A. Khan, and J. Yang, "Electromechanical coupling coefficient for surface acoustic waves in GaN-on-sapphire," Phys. Status Solidi (B), vol. 234, no. 3, pp. 897-900, Dec. 2002.
-
(2002)
Phys. Status Solidi (B)
, vol.234
, Issue.3
, pp. 897-900
-
-
Rimeika, R.1
Ciplys, D.2
Shur, M.S.3
Gaska, R.4
Khan, M.A.5
Yang, J.6
-
6
-
-
0000939713
-
1-xN thin films obtained by surface acoustic-wave measurements"
-
May
-
1-xN thin films obtained by surface acoustic-wave measurements," Appl. Phys. Lett., vol. 72, no. 19, pp. 2400-2402, May 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, Issue.19
, pp. 2400-2402
-
-
Deger, C.1
Born, E.2
Angere, H.3
Ambacher, O.4
Stutzmann, M.5
Hornsteiner, J.6
Riha, E.7
Fischerauer, G.8
-
7
-
-
0038657475
-
"Guided propagation of surface acoustic waves in AlN and GaN films grown on 4H-SiC(0001) substrates"
-
Oct
-
Y. Takagaki, P. V. Santos, E. Wiebicke, O. Brandt, H.-P. Schönherr, and K. H. Ploog, "Guided propagation of surface acoustic waves in AlN and GaN films grown on 4H-SiC(0001) substrates," Phys. Rev. B, Condens. Matter, vol. 66, no. 15, pp. 155 439-1-155 439-7, Oct. 2002.
-
(2002)
Phys. Rev. B, Condens. Matter
, vol.66
, Issue.15
-
-
Takagaki, Y.1
Santos, P.V.2
Wiebicke, E.3
Brandt, O.4
Schönherr, H.-P.5
Ploog, K.H.6
-
8
-
-
0037662266
-
"Experimental and theoretical characterization of the surface acoustic wave propagation properties of GaN epitaxial layers on c-plane sapphire"
-
May
-
K. H. Choi, H. J. Kim, S. J. Chung, J. Y. Kim, T. K. Lee, and Y. J. Kim, "Experimental and theoretical characterization of the surface acoustic wave propagation properties of GaN epitaxial layers on c-plane sapphire," J. Mater. Res., vol. 18, no. 5, pp. 1157-1161, May 2003.
-
(2003)
J. Mater. Res.
, vol.18
, Issue.5
, pp. 1157-1161
-
-
Choi, K.H.1
Kim, H.J.2
Chung, S.J.3
Kim, J.Y.4
Lee, T.K.5
Kim, Y.J.6
-
9
-
-
79956024656
-
"Visible-blind photoresponse of GaN-based surface acoustic wave oscillator"
-
Mar
-
D. Ciplys, R. Rimeika, M. S. Shur, S. Rumyantsev, R. Gaska, A. Sereika, J. Yang, and M. A. Khan, "Visible-blind photoresponse of GaN-based surface acoustic wave oscillator," Appl. Phys. Lett., vol. 80, no. 11, pp. 2020-2022, Mar. 2002.
-
(2002)
Appl. Phys. Lett.
, vol.80
, Issue.11
, pp. 2020-2022
-
-
Ciplys, D.1
Rimeika, R.2
Shur, M.S.3
Rumyantsev, S.4
Gaska, R.5
Sereika, A.6
Yang, J.7
Khan, M.A.8
-
10
-
-
0041510165
-
"Modulation of the electronic properties of GaN films by surface acoustic waves"
-
Aug
-
J. Camacho, P. V. Santos, F. Alsina, M. Ramsteiner, K. H. Ploog, A. Cantarero, H. Obloh, and J. Wagner, "Modulation of the electronic properties of GaN films by surface acoustic waves," J. Appl. Phys., vol. 94, no. 3, pp. 1892-1897, Aug. 2003.
-
(2003)
J. Appl. Phys.
, vol.94
, Issue.3
, pp. 1892-1897
-
-
Camacho, J.1
Santos, P.V.2
Alsina, F.3
Ramsteiner, M.4
Ploog, K.H.5
Cantarero, A.6
Obloh, H.7
Wagner, J.8
-
11
-
-
30344433577
-
"SAW characteristics of GaN layers with surfaces exposed by dry etching"
-
Oct
-
K. Nishimura, N. Shigekawa, H. Yokoyama, M. Hiroki, and K. Hohkawa, "SAW characteristics of GaN layers with surfaces exposed by dry etching," IEICE Electron. Express, vol. 2, no. 19, pp. 501-505, Oct. 2005.
-
(2005)
IEICE Electron. Express
, vol.2
, Issue.19
, pp. 501-505
-
-
Nishimura, K.1
Shigekawa, N.2
Yokoyama, H.3
Hiroki, M.4
Hohkawa, K.5
-
12
-
-
24344504857
-
"Side-gate effects on transfer characteristics in GaN-based transversal filters"
-
Aug
-
N. Shigekawa, K. Nishimura, H. Yokoyama, and K. Hohkawa, "Side-gate effects on transfer characteristics in GaN-based transversal filters," Appl. Phys. Lett., vol. 87, no. 8, pp. 084 102-1-084 102-3, Aug. 2005.
-
(2005)
Appl. Phys. Lett.
, vol.87
, Issue.8
-
-
Shigekawa, N.1
Nishimura, K.2
Yokoyama, H.3
Hohkawa, K.4
-
13
-
-
30344481672
-
+-GaN IDTs"
-
Jan
-
+-GaN IDTs," Electron. Lett., vol. 42, no. 1, pp. 62-63, Jan. 2006.
-
(2006)
Electron. Lett.
, vol.42
, Issue.1
, pp. 62-63
-
-
Nishimura, K.1
Shigekawa, N.2
Yokoyama, H.3
Hohkawa, K.4
-
14
-
-
7544220245
-
"Active SAW devices on 2DEG heterostructures"
-
Oct
-
F. Calle, J. Grajal, and J. Pedrós, "Active SAW devices on 2DEG heterostructures," Electron. Lett., vol. 40, no. 21, pp. 1384-1386, Oct. 2004.
-
(2004)
Electron. Lett.
, vol.40
, Issue.21
, pp. 1384-1386
-
-
Calle, F.1
Grajal, J.2
Pedrós, J.3
-
15
-
-
0036905527
-
"X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN"
-
Dec
-
K. A. Rickert, A. B. Ellis, J. K. Kim, J.-L. Lee, F. J. Himpsel, F. Dwikusuma, and T. F. Kuech, "X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN," J. Appl. Phys., vol. 92, no. 11, pp. 6671-6678, Dec. 2002.
-
(2002)
J. Appl. Phys.
, vol.92
, Issue.11
, pp. 6671-6678
-
-
Rickert, K.A.1
Ellis, A.B.2
Kim, J.K.3
Lee, J.-L.4
Himpsel, F.J.5
Dwikusuma, F.6
Kuech, T.F.7
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