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Volumn 40, Issue 21, 2004, Pages 1384-1386

Active SAW devices on 2DEG heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVES; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SENSORS; TRANSDUCERS;

EID: 7544220245     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20046321     Document Type: Article
Times cited : (20)

References (10)
  • 1
    • 7544237420 scopus 로고    scopus 로고
    • Interaction of surface acoustic waves, electrons and light
    • Wixforth, A.: 'Interaction of surface acoustic waves, electrons and light', Int. J. High Speed Electron. Syst., 2000, 10, pp. 1193-1227
    • (2000) Int. J. High Speed Electron. Syst. , vol.10 , pp. 1193-1227
    • Wixforth, A.1
  • 3
    • 7544235045 scopus 로고    scopus 로고
    • 'Integrated tunable surface acoustic wave with quantum well structure technology and systems provided thereby', United States Patent No. US 6.559.736 B2, May 6
    • Lu, Y., and Emanetoglu, N.W.: 'Integrated tunable surface acoustic wave with quantum well structure technology and systems provided thereby', United States Patent No. US 6.559.736 B2, May 6, 2003; http://www.ece.rutgers.edu/~ylu/research.html
    • (2003)
    • Lu, Y.1    Emanetoglu, N.W.2
  • 4
    • 0032181962 scopus 로고    scopus 로고
    • Growth and applications of group III-nitrides
    • Ambacher, O.: 'Growth and applications of group III-nitrides', Phys. D, Appl. Phys., 1998, 31, pp. 2653-2710
    • (1998) Phys. D, Appl. Phys. , vol.31 , pp. 2653-2710
    • Ambacher, O.1
  • 5
    • 0035848681 scopus 로고    scopus 로고
    • GaN-based SAW delay-line oscillator
    • Ciplys, D., et al.: 'GaN-based SAW delay-line oscillator', Electron. Lett., 2001, 37, pp. 545-546
    • (2001) Electron. Lett. , vol.37 , pp. 545-546
    • Ciplys, D.1
  • 6
    • 0036995588 scopus 로고    scopus 로고
    • High frequency SAW devices on AlGaN: Fabrication, characterization and integration with optoelectronics
    • Munich, Germany
    • Palaeios, T., et al.: 'High frequency SAW devices on AlGaN: fabrication, characterization and integration with optoelectronics'. IEEE Ultrasonics Symp. Proc., Munich, Germany, 2002, Vol. 1, pp. 57-60
    • (2002) IEEE Ultrasonics Symp. Proc. , vol.1 , pp. 57-60
    • Palaeios, T.1
  • 7
    • 2942588635 scopus 로고    scopus 로고
    • Dependence of AlGaN-based SAW oscillator frequency on temperature
    • Rimeika, R., et al.: 'Dependence of AlGaN-based SAW oscillator frequency on temperature', Electron. Lett., 2004, 40, pp. 637-638
    • (2004) Electron. Lett. , vol.40 , pp. 637-638
    • Rimeika, R.1
  • 8
    • 0142038457 scopus 로고    scopus 로고
    • Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
    • Ambacher, O., et al.: 'Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures', J. Appl. Phys., 2000, 87, pp. 334-344
    • (2000) J. Appl. Phys. , vol.87 , pp. 334-344
    • Ambacher, O.1
  • 9
    • 0001473741 scopus 로고    scopus 로고
    • AlGaN/GaN HEMTs - An overview of device operation and applications
    • Mistaa, U.K., et al.: 'AlGaN/GaN HEMTs - An overview of device operation and applications', Proc. IEEE, 2002, 90, pp. 1022-1031
    • (2002) Proc. IEEE , vol.90 , pp. 1022-1031
    • Mistaa, U.K.1
  • 10
    • 7544229183 scopus 로고    scopus 로고
    • Anisotropic propagation of surface acoustic waves on nitride layers
    • Strasbourg, France, (Superlattices and Microstructures) (in press)
    • Pedrós, J., et al.: 'Anisotropic propagation of surface acoustic waves on nitride layers'. Proc. Spring Meeting of E-MRS, Strasbourg, France, 2004 (Superlattices and Microstructures) (in press)
    • (2004) Proc. Spring Meeting of E-MRS
    • Pedrós, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.