SAW characteristics of GaN with n+-GaN IDTs

Electronics Letters

Volumn 42, Issue 1, 2006, Pages 62-63

  Nishimura, K ^a   Shigekawa, N ^a   Yokoyama, H ^a   Hohkawa, K ^b  

^a NTT CORPORATION   (Japan)

^b KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC SURFACE WAVE FILTERS; ACOUSTIC TRANSDUCERS; METAL ANALYSIS; NICKEL;

INTERDIGITAL TRANSDUCERS (IDT); METAL LAYERS;

GALLIUM NITRIDE;

EID: 30344481672     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20063748     Document Type: Article

References (6)

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2. Choi, K.H., Kim, H.J., Chung, S.J., Kim, J.Y., Lee, T.K., and Kim, Y.J.: ' Experimental and theoretical characterization of the surface acoustic wave propagation properties of GaN epitaxial layers on c-plane sapphire ', J. Mater. Res., 2003, 18, (5), p. 1157-1161
3. Nishimura, K., Shigekawa, N., Yokoyama, H., and Hohkawa, K.: ' Temperature dependence of surface acoustic wave characteristics of GaN layers on sapphire substrates ', Jpn. J. Appl. Phys., 2005, 44, (18), p. L564-L565
4. Nishimura, K., Shigekawa, N., Yokoyama, H., Hiroki, M., and Hohkawa, K.: ' SAW characteristics of GaN layers with surfaces exposed by dry etching ', IEICE Electron. Express, 2005, 2, (19), p. 501-505
5. Shigekawa, N., Nishimura, K., Yokoyama, H., and Hohkawa, K.: ' Side-gate effects on transfer characteristics in GaN-based transversal filters ', Appl. Phys. Lett., 2005, 87, (8), p. 084102
6. Rickert, K.A., Ellis, A.B., Kim, J.K., Lee, J.-L., Himpsel, F.J., Dwikusuma, F., and Kuech, T.F.: ' X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN ', J. Appl. Phys., 2002, 92, (11), p. 6671-6678