A unified process-based compact model for scaled PD/SOI and bulk-Si MOSFETs

2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Volumn , Issue , 2002, Pages 686-689

  Fossum, Jerry G ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

Physical compact model; Predictive circuit simulation; Scaled CMOS; Si MOSFETs

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ITERATIVE METHODS; MATHEMATICAL MODELS; OPTIMIZATION; PARAMETER ESTIMATION; POLYSILICON;

BANDGAP; CHANNEL CURRENT; RECOMBINATION CURRENT; SELF HEATING;

MOSFET DEVICES;

EID: 6344291938     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)

1. International Technology Roadmap for Semiconductors. Semiconductor Industry Assoc., 1999.
2. D. Foty, IEEE Circuits & Devices, p. 26, July 1998.
3. S.K. Fung, et al., VLSI Symp. Tech. Dig., p. 206, June 2000.
4. BSIM Manual. EECS Dept., Univ. California, Berkeley.
5. UFSOI (PDB and FD) MOSFET Models User's Guide. SOI Group (http://www.soi.tec.ufl.edu), Univ. Florida, Gainesville, June 2001.
6. D. Suh and J.G. Fossum, IEEE Trans. Electron Devices, vol. 42, p. 728, Apr. 1995.
7. D. Suh, Ph.D. Dissertation, Univ. Florida, 1995.
8. S. Krishnan, Ph.D. Dissertation, Univ. Florida, 1996.
9. D. Chang, Ph.D. Dissertation, Univ. Florida, 1997.
10. G.O. Workman, Ph.D. Dissertation, Univ. Florida, 1999.
11. K. Kim, Ph.D. Dissertation, Univ. Florida, 2001.
12. M.-H. Chiang, Ph.D. Dissertation, Univ. Florida, 2001.
13. S. Krishnan and J.G. Fossum, IEEE Circuits & Devices Mag., vol. 14, p. 32, July 1998.
14. S. Krishnan and J.G. Fossum, Solid-State Electron., vol. 39, p. 661, May 1996.
15. L. Ge, J.G. Fossum, and B. Liu, IEEE Trans. Electron Devices, vol. 48, p. 2074, Sept. 2001.
16. G.O. Workman, et al., IEEE Trans. Electron Devices, vol. 45, p. 125, Jan. 1998.
17. M.M. Pelella and J.G. Fossum, IEEE Trans. Electron Devices, vol. 49, Jan. 2002.
18. J.G. Fossum, M.M. Pelella, and S. Krishnan, IEEE Electron Device Lett., vol. 19, p. 414, Nov. 1998.
19. W. Zhou, private communication, Sept. 1999.
20. M.S. Lundstrom, IEEE Electron Device Lett., vol. 22, p. 295, June 2001.
21. K. Mistry, et al., VLSI Symp. Tech. Dig., p. 204, June 2000.