Importance of Si-N atomic configuration at the Si/oxynitride interfaces on the performance of scaled MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 575-578

  Takayanagi Takagi, Mariko ^a   Toyoshima, Yoshiaki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHARGE CARRIERS; CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRON SCATTERING; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDES; SILICON NITRIDE; SURFACE ROUGHNESS;

COULOMB SCATTERING; GATE DIELECTRICS; OXYNITRIDES;

MOSFET DEVICES;

EID: 0032254783     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)