Effect of annealing temperature on ferroelectric properties of (Bi, Nd)4(Ti, V)3O12 thin films

Transactions of Nonferrous Metals Society of China (English Edition)

Volumn 16, Issue SUPPL., 2006, Pages

  Ye, Zhi ^a   Tang, Ming Hua ^a,b   Cheng, Chuan Pin ^a   Zhou, Yi Chun ^a,b   Zheng, Xue Jun ^a,b   Hu, Zeng Shun ^a  

^a XIANGTAN UNIVERSITY   (China)

^b Key Laboratory of Advanced Materials and Rheological Properties   (China)

Author keywords

Annealing; Crystallization; Ferroelectric properties; Scanning electron microscopy

Indexed keywords

ANNEALING; CRYSTALLIZATION; EFFECTS; FERROELECTRICITY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

CHEMICAL SOLUTION DEPOSITION; FERROELECTRIC PROPERTIES;

THIN FILMS;

EID: 33746783395     PISSN: 10036326     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1003-6326(06)60145-3     Document Type: Article

References (14)

1. 5+ cosubstitution [J]. Appl Phys Lett, 2002, 81(12): 2229-2230.
2. SCOTT J F, ARAUJO C A. Ferroelectric memories [J]. Science, 1989, 246: 1400-1405.
3. ZHENG X J, ZHOU Y C, ZHONG H. Dependence of fracture toughness on annealing temperature in PZT thin films produced by metal organic decomposition [J]. Journal of Materials Research, 2003, 18(3): 578-584.
4. ARAUJO C A, CUCHIARO J D, MCMILLAN L D, SCOTT M C, SCOTT J F. Fatigue-free ferroelectric capacitors with platinum electrodes [J]. Nature (London), 1995, 374: 627-629.
5. PARK B H, KANG B S, BU S D, NOH T W, LEE L, JO W. Lanthanum-substituted bismuth titanate for use in non-volatile memories [J]. Nature (London), 1999, 401: 682-684.
6. 12 based thin films modified by the site engineering technique [J]. J Appl Phys, 2002, 92: 1518-1521.
7. 12 thin films on the low-temperature deposition [J]. Appl Phys Lett, 2001, 80(1): 100-102.
8. 12 thin films under a moderate temperature annealing [J]. Appl Phys Lett, 2004, 85(23): 5661-5663.
9. 12 thin films fabricated by chemical solution deposition [J]. J Crystal Growth, 2005, 277(1-4): 233-237.
10. 2 environment by chemical solution deposition [J]. Appl Phys A: Mater Sci Process, 2005, 81: 1249-1252.
11. 12 (BLT) films with c-axis-preferred and random orientations [J]. Jpn J Appl Phys, 2003, 42: 182-185.
12. 2/Si substrates [J]. Jpn J Appl Ahys, 2003, 42: 1665-1669.
13. HOU F, SHEN M, CAO W, Ferroelectric properties of neodymium-doped Bi4Ti3O12 thin films crystallized in different environments [J]. Thin Solid Films, 2004, 471: 35-39.
14. 12 polycrystalline thin films [J]. Appl Phys Lett, 2002, 81: 3221-3223.