Structure evolution and ferroelectric and dielectric properties of Bi 3.5Nd0.5Ti3O12 thin films under a moderate temperature annealing

Applied Physics Letters

Volumn 85, Issue 23, 2004, Pages 5661-5663

  Zhong, X L ^a   Wang, J B ^a   Zheng, X J ^a   Zhou, Y C ^a   Yang, G W ^b  

^a XIANGTAN UNIVERSITY   (China)

^b SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL ORIENTATION; DEPOSITION; ELECTROMAGNETIC WAVE POLARIZATION; FERROELECTRICITY; LEAKAGE CURRENTS; MORPHOLOGY; PERMITTIVITY; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CHEMICAL SOLUTION DEPOSITION (CSD); HYSTERESIS LOOPS; NONVOLATILE FERROELECTRIC RANDOM ACCESS MEMORIES (NVFERAM); REMANANT POLARIZATION;

FERROELECTRIC THIN FILMS;

EID: 12844271248     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1834731     Document Type: Article

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